SK Hynix has successfully developed LPDDR5X (Low Power Double Data Rate 5X) by using HKMG (High K Metal Gate) technology for mobile DRAM for the first time in the world, and recently started selling it.

HKMG (High-K Metal Gate) : The use of high-K gate dielectric on the insulating film inside the DRAM transistor, in addition to prevent leakage at the same time can improve the Capacitance of the new generation of technology. It can not only improve memory speed, but also reduce power consumption.

Operating within the ultra-low voltage range (1.01 to 1.12V) specified by the JEDEC (Joint Electron Device Engineering Council), the device also uses 25% less power than its predecessor, achieving the highest energy efficiency in the industry.

Mobile DRAM is also called LPDDR, where LP stands for "Low Power." Low power consumption is the most critical factor. Mobile devices have limited power, and in order to extend the life of the product, the power consumption must be reduced as much as possible.

This is why memory products focus on low power consumption as well as speed. SK Hynix's LPDDR5X is the first to introduce HKMG technology in mobile DRAM, which improves product performance while reducing power consumption.

The LPDDR5X's reduced power consumption means that mobile devices using the LPDDR5X can last longer on a single charge. In line with SK Hynix's ESG management philosophy, consumers will use less electricity. In addition, SK Hynix successfully developed LPDDR5X, which is up to 8.5Gbps, 33 percent faster than its predecessor.