On November 7, 2022, Samsung Electronics announced that it has started mass production of the 1Tb (terabyte) three-stage unit (TLC) 8-generation V-NAND with the highest storage density among Samsung products.

The all-new 1Tb V-NAND has the highest storage density among current Samsung V-NAND, providing a storage solution with larger capacity and higher density for enterprise systems worldwide.

Samsung's 8th-generation V-NAND uses 3D scaling to reduce the surface area and height while avoiding the inter-cell interference that usually occurs when scaling.

With 3D scaling, Samsung can significantly increase the storage density per wafer. Based on the latest NAND flash standard Toggle DDR 5.0 interface, Samsung's 8th-generation V-NAND has input and output (I/O) speeds of up to 2.4 Gbps (gigabit per second), which is 1.2 times higher than the previous generation and can meet the performance requirements of PCIe 4.0 and later versions of PCIe 5.0.

According to Samsung, the 8th-generation V-NAND is expected to be the cornerstone of storage configurations, helping to expand the storage capacity of next-generation enterprise servers, as well as the in-car market, where reliability is particularly important.

Earlier, Samsung debuted the 8th generation of the 512Gb TLC V-NAND at the 2022 Technology Day, which increased the bit density by 42 percent, and announced that the world's highest capacity 1Tb TLC V-NAND will be available to customers by the end of this year.

As the world's largest NAND Flash vendor, Samsung expects to have more than 1,000 NAND flash stacks by 2030 to better support future data-intensive technologies.